PTVS30VS1UR,115

PTVSxS1UR_SER

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 3 — 10 January 2011 

3 of 12

NXP Semiconductors

PTVSxS1UR series

400 W Transient Voltage Suppressor

5. Limiting 

values

 

[1]

In accordance with IEC 61643-321 (10/1000

μs current waveform).

[2]

For PTVS3V3S1UR: P

PPM

= 350 W

 

[1]

Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses.

[2]

Soldering point of cathode tab.

 

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

P

PPM

rated peak pulse power

[1][2]

-

400

W

I

PPM

rated peak pulse current

[1]

-

see 

Table 9

 

and 

10

I

FSM

Non-repetitive peak 
forward current

single half-sine 
wave; t

p

= 8.3 ms

-

50

A

T

j

junction temperature

-

150

°C

T

amb

ambient temperature

−55

+150

°C

T

stg

storage temperature

−65

+150

°C

Table 6.

ESD maximum ratings

T

amb

= 25

°

C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

V

ESD

electrostatic discharge voltage

IEC 61000-4-2 
(contact discharge)

[1][2]

-

30

kV

Table 7.

ESD standards compliance

Standard

Conditions

Per diode

IEC 61000-4-2; level 4 (ESD)

> 15 kV (air); > 8 kV (contact)

MIL-STD-883; class 3 (human body model)

> 4 kV

PTVS30VS1UR,115 Datasheet Related Products:
PTVS30VS1UR,115 Information:
Part No.
PTVS30VS1UR,115
Description
TVS DIODE 30VWM 48.4VC SOD123W
File Size
114122 bytes
Page Size
595.22 x 842 pts (A4)
All Pages
12
Manufacturer
NXP Semiconductors
Homepage
http://www.nxp.com/
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