PTVS30VS1UR,115

PTVSxS1UR_SER

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 3 — 10 January 2011 

6 of 12

NXP Semiconductors

PTVSxS1UR series

400 W Transient Voltage Suppressor

 

Fig 1.

10/1000

μs pulse waveform according to 

IEC 61643-321

Fig 2.

Relative variation of rated peak pulse power as 
a function of junction temperature; typical 
values

T

amb

= 25

°C

(1) PTVS5V0S1UR to PTVS64VS1UR

(2) PTVS3V3S1UR

Fig 3.

Rated peak pulse power as a function of pulse duration; typical values

t

p

 (ms)

0

4.0

3.0

1.0

2.0

006aab319

50

100

150

I

PP

(%)

0

50 % I

PP

; 1000 

μs

100 % I

PP

; 10 

μs

T

j

 (

°C)

0

200

150

50

100

006aab321

0.4

0.8

1.2

P

PPM

0

P

PPM(25

°C)

006aab418

10

−1

t

p

 (

μs)

10

3

10

4

10

2

1

10

10

4

10

3

10

5

P

PPM

(W)

10

2

(2)

(1)

PTVS30VS1UR,115 Datasheet Related Products:
PTVS30VS1UR,115 Information:
Part No.
PTVS30VS1UR,115
Description
TVS DIODE 30VWM 48.4VC SOD123W
File Size
114122 bytes
Page Size
595.22 x 842 pts (A4)
All Pages
12
Manufacturer
NXP Semiconductors
Homepage
http://www.nxp.com/
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