25LC128
Hotenda Part Number
H1806520
Manufacturer Part
SI2301BDS-T1-E3
Manufacturer
Vishay/Siliconix
Description
MOSFET P-CH 20V 2.2A SOT23-3
Category
Discrete Semiconductor Products
Family
Single FETs
Series
-
Manufacturer Quantity
7544
Datasheets Online
-
Price & Packaging & Delivery
Quantity
Unit Price
Ext. Price
1
$0.45
$0.45
10
$0.03
$0.34
100
$0.00
$0.21
500
$0.00
$0.14
1,000
$0.11
$0.11

Attention: The price is for reference only , pls send us RFQs for the update price.

Packaging: Regular packing reel, tube, tray, box and etc.

Delivery: Shipping can be arranged ASAP since payment received

Inquiry
  • FedEx, DHL, and UPS can be selected.
  • You can select whether to charge shipping fee by your shipping account or to charge by our side.
  • Please confirm with the logistics company in advance if you are in a remote area. (It may cost extra fees (35-50 USD) for delivery at those areas.)
  • The shopping cart will automatically calculate the shipping cost.
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (Package Tracking) (It may take up to 24 hours before carriers display the info.)
  • PayPal, Credit Card, TT in advance (bank transfer), Western Union can be chosen.
  • Cash transfer only. (Transfer with checks and bills are not accepted.)
  • Customer is responsible for paying all possible charges, including sales tax, VAT and customs charges,etc.
  • If you need the detailed invoice or tax ID, please email us.
Current - Continuous Drain (Id) @ 25°C
2.2A (Ta)
Drain to Source Voltage (Vdss)
20V
FET Feature
Logic Level Gate
FET Type
MOSFET P-Channel, Metal Oxide
Gate Charge (Qg) @ Vgs
10nC @ 4.5V
Input Capacitance (Ciss) @ Vds
375pF @ 6V
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Power - Max
700mW
Rds On (Max) @ Id, Vgs
100 mOhm @ 2.8A, 4.5V
Supplier Device Package
SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id
950mV @ 250µA

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