25LC128
Hotenda Part Number
H4297444
Manufacturer Part
RN1103MFV,L3F
Manufacturer
Toshiba Semiconductor & Storage
Description
TRANS PREBIAS NPN 150MW VESM
Category
Discrete Semiconductor Products
Family
Pre-Biased BJT Transistors
Series
-
Manufacturer Quantity
8468
Datasheets Online
-
Price & Packaging & Delivery
Quantity
Unit Price
Ext. Price
1
$0.19
$0.19
10
$0.02
$0.17
25
$0.01
$0.15
100
$0.00
$0.11
250
$0.00
$0.07
500
$0.00
$0.05
1,000
$0.04
$0.04
2,500
$0.02
$0.03

Attention: The price is for reference only , pls send us RFQs for the update price.

Packaging: Regular packing reel, tube, tray, box and etc.

Delivery: Shipping can be arranged ASAP since payment received

Inquiry
  • FedEx, DHL, and UPS can be selected.
  • You can select whether to charge shipping fee by your shipping account or to charge by our side.
  • Please confirm with the logistics company in advance if you are in a remote area. (It may cost extra fees (35-50 USD) for delivery at those areas.)
  • The shopping cart will automatically calculate the shipping cost.
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (Package Tracking) (It may take up to 24 hours before carriers display the info.)
  • PayPal, Credit Card, TT in advance (bank transfer), Western Union can be chosen.
  • Cash transfer only. (Transfer with checks and bills are not accepted.)
  • Customer is responsible for paying all possible charges, including sales tax, VAT and customs charges,etc.
  • If you need the detailed invoice or tax ID, please email us.
Current - Collector (Ic) (Max)
100mA
Current - Collector Cutoff (Max)
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 10mA, 5V
Frequency - Transition
-
Mounting Type
Surface Mount
Package / Case
SOT-723
Power - Max
150mW
Resistor - Base (R1) (Ohms)
22k
Resistor - Emitter Base (R2) (Ohms)
22k
Supplier Device Package
VESM
Transistor Type
NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max)
50V

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