DMHT6016LFJ-13 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available on our website
SOT-23
DMHT6016LFJ-13 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Surface Mount
Package / Case
12-VDFN Exposed Pad
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2016
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
FET Type
4 N-Channel
Rds On (Max) @ Id, Vgs
22m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
864pF @ 30V
Current - Continuous Drain (Id) @ 25°C
14.8A Ta
Gate Charge (Qg) (Max) @ Vgs
8.4nC @ 4.5V
FET Feature
Standard
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
DMHT6016LFJ-13 Product Details
DMHT6016LFJ-13 Description
DMHT6016LFJ-13 developed by Diodes Incorporated is a type of new generation complementary MOSFET H-Bridge featuring low on-resistance achievable with low gate drive. It is able to deliver high conversion efficiency, fast switching speed, and low input capacitance. Based on its low RDS (on), on-state losses can be minimized.