DZT591C-13 Overview

This device has a DC current gain of 100 @ 500mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -600mV, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 100mA, 1A.Continuous collector voltages should be kept at -1A to achieve high efficiency.Keeping the emitter base voltage at 5V can result in a high level of efficiency.In the part, the transition frequency is 150MHz.This device can take an input voltage of 60V volts before it breaks down.The maximum collector current is 1A volts.

DZT591C-13 Features

the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz

DZT591C-13 Applications

There are a lot of Diodes Incorporated DZT591C-13 applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter