MMBT4124-7-F Overview

In this device, the DC current gain is 120 @ 2mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 5mA, 50mA.Continuous collector voltages should be kept at 200mA to achieve high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 200mA.Parts of this part have transition frequencies of 300MHz.Breakdown input voltage is 25V volts.Collector current can be as low as 200mA volts at its maximum.

MMBT4124-7-F Features

the DC current gain for this device is 120 @ 2mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
a transition frequency of 300MHz

MMBT4124-7-F Applications

There are a lot of Diodes Incorporated MMBT4124-7-F applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting