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MT29F4G16ABBEAH4-IT:E TR

MT29F4G16ABBEAH4-IT:E TR

MT29F4G16ABBEAH4-IT:E TR

Micron Technology Inc.

Memory IC MT29F4G16

SOT-23

MT29F4G16ABBEAH4-IT:E TR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 9 Weeks
Mounting Type Surface Mount
Package / Case 63-VFBGA
Operating Temperature -40°C~85°C TA
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology FLASH - NAND
Voltage - Supply 1.7V~1.95V
Base Part Number MT29F4G16
Memory Size 4Gb 256M x 16
Memory Type Non-Volatile
Memory Format FLASH
Memory Interface Parallel
Programming Voltage 1.8V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $4.87692 $4.87692
MT29F4G16ABBEAH4-IT:E TR Product Details

MT29F4G16ABBEAH4-IT:E TR Overview


In terms of its memory type, it can be classified as Non-Volatile. The case comes in Tape & Reel (TR) size. The case is embedded in 63-VFBGA. Memory size on the chip is 4Gb 256M x 16. This device uses takes advantage of the FLASH format. The device's extended operating temperature range of -40°C~85°C TA makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 1.7V~1.95V. The recommended mounting type for this device is Surface Mount. It is common to select similar parts by referring to the device's base part number, MT29F4G16. A programming voltage of 1.8V is required to alter the state of certain nonvolatile memory arrays.

MT29F4G16ABBEAH4-IT:E TR Features


Package / Case: 63-VFBGA


MT29F4G16ABBEAH4-IT:E TR Applications


There are a lot of Micron Technology Inc.
MT29F4G16ABBEAH4-IT:E TR Memory applications.


  • eSRAM
  • mainframes
  • multimedia computers
  • networking
  • personal computers
  • servers
  • supercomputers
  • telecommunications
  • workstations,
  • DVD disk buffer

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