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MT53B512M64D4NJ-062 WT ES:B TR

MT53B512M64D4NJ-062 WT ES:B TR

MT53B512M64D4NJ-062 WT ES:B TR

Micron Technology Inc.

Memory IC

SOT-23

MT53B512M64D4NJ-062 WT ES:B TR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 272-WFBGA
Supplier Device Package 272-WFBGA (15x15)
Operating Temperature -30°C~85°C TC
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology SDRAM - Mobile LPDDR4
Voltage - Supply 1.1V
Memory Size 32Gb 512M x 64
Memory Type Volatile
Clock Frequency 1600MHz
Memory Format DRAM
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
MT53B512M64D4NJ-062 WT ES:B TR Product Details

MT53B512M64D4NJ-062 WT ES:B TR Overview


There is a memory type Volatile for this type of device. It comes in a Tape & Reel (TR). There is a 272-WFBGA case embedded in it. There is an 32Gb 512M x 64 memory capacity on the chip. The device uses a mainstream DRAM-format memory. -30°C~85°C TC is an extended operating temperature range, making this device ideal for demanding applications. The device is capable of handling a supply voltage of 1.1V volts. The recommended mounting type for this device is Surface Mount. The memory has a clock frequency rotation within 1600MHz.

MT53B512M64D4NJ-062 WT ES:B TR Features


Package / Case: 272-WFBGA

MT53B512M64D4NJ-062 WT ES:B TR Applications


There are a lot of Micron Technology Inc. MT53B512M64D4NJ-062 WT ES:B TR Memory applications.

  • graphics card
  • personal digital assistants
  • servers
  • networking
  • personal computers
  • eDRAM
  • networks
  • eSRAM
  • data buffer
  • embedded logic

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