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JANTX1N6661US

JANTX1N6661US

JANTX1N6661US

Microsemi Corporation

DIODE GEN PURP 225V 500MA D5A

SOT-23

JANTX1N6661US Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SQ-MELF, A
Number of Pins 2
Diode Element Material SILICON
Packaging Bulk
Published 1999
Series Military, MIL-PRF-19500/587
JESD-609 Code e0
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 175°C
Min Operating Temperature -65°C
HTS Code 8541.10.00.70
Terminal Position AXIAL
Terminal Form WIRE
Reference Standard MIL-19500/587
Qualification Status Qualified
Number of Elements 1
Element Configuration Single
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 50nA @ 225V
Voltage - Forward (Vf) (Max) @ If 1V @ 400mA
Case Connection ISOLATED
Forward Current 500mA
Operating Temperature - Junction -65°C~175°C
Peak Reverse Current 50nA
Max Repetitive Reverse Voltage (Vrrm) 225V
JEDEC-95 Code DO-35
Peak Non-Repetitive Surge Current 5A
Radiation Hardening No
RoHS Status Non-RoHS Compliant

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