JANTX2N2904 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANTX2N2904 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
36 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 4 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/290
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Max Power Dissipation
600mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
600mW
Case Connection
COLLECTOR
Power - Max
800mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA 10V
Current - Collector Cutoff (Max)
1μA
Vce Saturation (Max) @ Ib, Ic
1.6V @ 50mA, 500mA
Transition Frequency
200MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
Turn On Time-Max (ton)
45ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JANTX2N2904 Product Details
JANTX2N2904 Overview
This device has a DC current gain of 40 @ 150mA 10V, which is the ratio between the collector current and the base current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.6V @ 50mA, 500mA.Emitter base voltages of 5V can achieve high levels of efficiency.There is a transition frequency of 200MHz in the part.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.
JANTX2N2904 Features
the DC current gain for this device is 40 @ 150mA 10V the vce saturation(Max) is 1.6V @ 50mA, 500mA the emitter base voltage is kept at 5V a transition frequency of 200MHz
JANTX2N2904 Applications
There are a lot of Microsemi Corporation JANTX2N2904 applications of single BJT transistors.