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JANTX2N3997

JANTX2N3997

JANTX2N3997

Microsemi Corporation

JANTX2N3997 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N3997 Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mount Stud
Mounting Type Chassis, Stud Mount
Package / Case TO-111-4, Stud
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/374
JESD-609 Code e0
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation 2W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 4
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Case Connection ISOLATED
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1A 2V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 2V @ 500mA, 5A
Current - Collector (Ic) (Max) 10A
Collector Base Voltage (VCBO) 100V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
JANTX2N3997 Product Details

JANTX2N3997 Overview


In this device, the DC current gain is 80 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A maximum collector current of 5A volts is possible.

JANTX2N3997 Features


the DC current gain for this device is 80 @ 1A 2V
the vce saturation(Max) is 2V @ 500mA, 5A

JANTX2N3997 Applications


There are a lot of Microsemi Corporation JANTX2N3997 applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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