JANTXV2N2907A Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.6V @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.This product comes in a TO-18 device package from the supplier.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.A maximum collector current of 600mA volts can be achieved.

JANTXV2N2907A Features

the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of TO-18

JANTXV2N2907A Applications

There are a lot of Microsemi Corporation JANTXV2N2907A applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface