NP88N075KUE-E1-AY

new-10%

Manufacturer part number:NP88N075KUE-E1-AY

Manufacturer:Renesas Electronics America

Description:MOSFET N-CH 75V 88A TO-263

Case Package:SOT-23

Datasheet:NP88N075KUE-E1-AY Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	175°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.8W Ta 288W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.5m Ω @ 44A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	12300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	88A Tc
Gate Charge (Qg) (Max) @ Vgs	230nC @ 10V
Drain to Source Voltage (Vdss)	75V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	88A
Drain-source On Resistance-Max	0.0085Ohm
Pulsed Drain Current-Max (IDM)	352A
DS Breakdown Voltage-Min	75V
Avalanche Energy Rating (Eas)	450 mJ
RoHS Status	ROHS3 Compliant