BZV55B9V1 L1G

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Manufacturer part number:BZV55B9V1 L1G

Manufacturer:Taiwan Semiconductor Corporation

Description:10Ohms ±2% 100nA @ 6.8V -65°C~175°C TJ DO-213AC, MINI-MELF, SOD-80

Case Package:SOT-23

Datasheet:BZV55B9V1 L1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mounting Type	Surface Mount
Package / Case	DO-213AC, MINI-MELF, SOD-80
Supplier Device Package	Mini MELF
Operating Temperature	-65°C~175°C TJ
Packaging	Tape & Reel (TR)
Tolerance	±2%
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Current - Reverse Leakage @ Vr	100nA @ 6.8V
Voltage - Forward (Vf) (Max) @ If	1V @ 100mA
Power - Max	500mW
Impedance-Max	10Ohms
Voltage - Zener (Nom) (Vz)	9.1V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price

BZV55B9V1 L1G Overview

An electrical device like this requires a reverse leakage current of 100nA @ 6.8V.While the device is operating, the maximum voltage - Zener (Nom) is reduced to 9.1V.For operation, diode reaches 1V @ 100mA at the maximum voltage - Forward (Vf).