SSM6N7002KFU,LF

new-10%

Manufacturer part number:SSM6N7002KFU,LF

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET 2N-CH 60V 0.3A

Case Package:SOT-23

Datasheet:SSM6N7002KFU,LF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Max Power Dissipation	285mW
Terminal Form	GULL WING
Reference Standard	AEC-Q101
JESD-30 Code	R-PDSO-G6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Operating Mode	ENHANCEMENT MODE
Power - Max	285mW
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.5 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id	2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	40pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	0.6nC @ 4.5V
Drain to Source Voltage (Vdss)	60V
Continuous Drain Current (ID)	300mA
Drain Current-Max (Abs) (ID)	0.3A
Drain-source On Resistance-Max	1.75Ohm
DS Breakdown Voltage-Min	60V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
RoHS Status	RoHS Compliant