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SI1405BDH-T1-GE3

SI1405BDH-T1-GE3

SI1405BDH-T1-GE3

Vishay Siliconix

MOSFET P-CH 8V 1.6A SC-70-6

SOT-23

SI1405BDH-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Supplier Device Package SC-70-6 (SOT-363)
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 1.47W Ta 2.27W Tc
Power Dissipation 1.47W
Turn On Delay Time 10 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 112mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 305pF @ 4V
Current - Continuous Drain (Id) @ 25°C 1.6A Tc
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 4.5V
Rise Time 26ns
Drain to Source Voltage (Vdss) 8V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 1.6A
Gate to Source Voltage (Vgs) 8V
Input Capacitance 305pF
Rds On Max 112 mΩ
Radiation Hardening No
RoHS Status ROHS3 Compliant

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