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SI4010DY-T1-GE3

SI4010DY-T1-GE3

SI4010DY-T1-GE3

Vishay Siliconix

MOSFET N-Channel 30V

SOT-23

SI4010DY-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 27 Weeks
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Supplier Device Package 8-SO
Operating Temperature -55°C~150°C TA
Packaging Tape & Reel (TR)
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 3.4mOhm
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 6W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3595pF @ 15V
Current - Continuous Drain (Id) @ 25°C 31.3A Tc
Gate Charge (Qg) (Max) @ Vgs 77nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +20V, -16V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.46494 $0.92988

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