SQ1912EH-T1_GE3

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Manufacturer part number:SQ1912EH-T1_GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 2 N-CH 20V 800MA SC70-6

Case Package:SOT-23

Datasheet:SQ1912EH-T1_GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101, TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-G6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power - Max	1.5W
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	280m Ω @ 1.2A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	75pF @ 10V
Current - Continuous Drain (Id) @ 25°C	800mA Tc
Gate Charge (Qg) (Max) @ Vgs	1.15nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Drain Current-Max (Abs) (ID)	0.8A
Drain-source On Resistance-Max	0.28Ohm
DS Breakdown Voltage-Min	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
Feedback Cap-Max (Crss)	12 pF
RoHS Status	ROHS3 Compliant