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AT25DF041B-MHN-T

AT25DF041B-MHN-T

AT25DF041B-MHN-T

Adesto Technologies

Memory IC 6mm mm

SOT-23

AT25DF041B-MHN-T Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case 8-UDFN Exposed Pad
Surface Mount YES
Operating Temperature -40°C~85°C TC
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Technology CMOS
Voltage - Supply 1.65V~3.6V
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 1.8V
Terminal Pitch 1.27mm
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-N8
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 1.65V
Memory Size 4Mb 512K x 8
Memory Type Non-Volatile
Operating Mode SYNCHRONOUS
Clock Frequency 104MHz
Memory Format FLASH
Memory Interface SPI
Organization 4MX1
Memory Width 1
Write Cycle Time - Word, Page 8μs, 2.5ms
Memory Density 4194304 bit
Parallel/Serial SERIAL
Programming Voltage 1.8V
Length 6mm
Height Seated (Max) 0.6mm
Width 5mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
6,000 $0.91624 $5.49744
AT25DF041B-MHN-T Product Details

AT25DF041B-MHN-T Overview


Its memory type can be classified as Non-Volatile. It comes in a Tape & Reel (TR). It is available in 8-UDFN Exposed Pad case. The memory size of the chip is 4Mb 512K x 8 Mb. This device utilizes a FLASH format memory which is of mainstream design. With an extended designed operating temperature of -40°C~85°C TC, this device is capable of lots of demanding applications. It is supplied votage within 1.65V~3.6V. Its recommended mounting type is Surface Mount. 8 terminations are planted on the chip. This part supports as many as 1 functions for the comprehensive working procedure. This ic memory chip is designed to be supplied with 1.8V. The memory has a clock frequency rotation within 104MHz. To alter the state of certain nonvolatile memory arrays, 1.8V programming voltage is required.

AT25DF041B-MHN-T Features


Package / Case: 8-UDFN Exposed Pad


AT25DF041B-MHN-T Applications


There are a lot of Adesto Technologies
AT25DF041B-MHN-T Memory applications.


  • Cache memory
  • cell phones
  • eSRAM
  • mainframes
  • multimedia computers
  • networking
  • personal computers
  • servers
  • supercomputers
  • telecommunications

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