AT25PE80-SHN-T

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Manufacturer part number:AT25PE80-SHN-T

Manufacturer:Adesto Technologies

Description:Memory IC 5.29mm mm

Case Package:SOT-23

Datasheet:AT25PE80-SHN-T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.209, 5.30mm Width)
Surface Mount	YES
Operating Temperature	-40°C~85°C TC
Packaging	Tape & Reel (TR)
Published	2012
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Additional Feature	IT ALSO OPERATES AT FREQUENCY 85 MHZ AT 1.7 TO 3.6 V SUPPLY VOLTAGE
Technology	CMOS
Voltage - Supply	1.7V~3.6V
Terminal Position	DUAL
Number of Functions	1
Terminal Pitch	1.27mm
JESD-30 Code	R-PDSO-G8
Memory Size	8M 4096 pagesx256bytes
Memory Type	Non-Volatile
Operating Mode	SYNCHRONOUS
Clock Frequency	85MHz
Memory Format	FLASH
Memory Interface	SPI
Write Cycle Time - Word, Page	8μs, 4ms
Parallel/Serial	SERIAL
Programming Voltage	1.8V
Height Seated (Max)	2.16mm
Length	5.29mm
Width	5.24mm
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$11.280039	$11.280039
10	$10.641546	$106.41546
100	$10.039195	$1003.9195
500	$9.470938	$4735.469
1000	$8.934848	$8934.848

AT25PE80-SHN-T Overview

In terms of its memory type, it can be classified as Non-Volatile. The case comes in Tape & Reel (TR) size. The case is embedded in 8-SOIC (0.209, 5.30mm Width). Memory size on the chip is 8M 4096 pagesx256bytes. This device uses takes advantage of the FLASH format. The device's extended operating temperature range of -40°C~85°C TC makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 1.7V~3.6V. The recommended mounting type for this device is Surface Mount. On the chip, there are 8 terminations. The comprehensive working procedure is supported by 1 functions in this part. There is a clock frequency rotation of the memory within a 85MHz range. It also features IT ALSO OPERATES AT FREQUENCY 85 MHZ AT 1.7 TO 3.6 V SUPPLY VOLTAGE to boost system performance despite all its merits. A programming voltage of 1.8V is required to alter the state of certain nonvolatile memory arrays.