AT25SF641-MHB-T

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Manufacturer part number:AT25SF641-MHB-T

Manufacturer:Adesto Technologies

Description:Memory IC 6mm mm

Case Package:SOT-23

Datasheet:AT25SF641-MHB-T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mounting Type	Surface Mount
Package / Case	8-UDFN Exposed Pad
Surface Mount	YES
Operating Temperature	-40°C~85°C TA
Packaging	Tape & Reel (TR)
Published	2016
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Technology	CMOS
Voltage - Supply	2.7V~3.6V
Terminal Position	DUAL
Number of Functions	1
Supply Voltage	1.8V
Terminal Pitch	1.27mm
JESD-30 Code	R-PDSO-N8
Supply Voltage-Max (Vsup)	1.95V
Supply Voltage-Min (Vsup)	1.65V
Memory Size	64Mb 8M x 8
Memory Type	Non-Volatile
Operating Mode	SYNCHRONOUS
Clock Frequency	104MHz
Memory Format	FLASH
Memory Interface	SPI
Organization	64MX1
Memory Width	1
Write Cycle Time - Word, Page	150μs, 5ms
Memory Density	67108864 bit
Parallel/Serial	SERIAL
Programming Voltage	2.7V
Height Seated (Max)	0.6mm
Length	6mm
Width	5mm
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
6,000	$0.71570	$4.2942
12,000	$0.69208	$8.30496

AT25SF641-MHB-T Overview

A Non-Volatile-type memory can be classified as the memory type of this device. In addition, memory ics is available in a Tape & Reel (TR) case as well. Embedded in the 8-UDFN Exposed Pad case, memory ics is a single file. It is estimated that the memory size on the chip is 64Mb 8M x 8. The device uses a mainstream FLASH-format memory. A wide operating temperature range makes this device ideal for a variety of demanding applications. The device is capable of handling a supply voltage of 2.7V~3.6V. There is a recommendation that Surface Mount mounting type should be used for this product. The chip has 8 terminations. It supports up to 1 functions for comprehensive operation. The memory device designed for this application has been designed to be powered by an 1.8V power supply. With a clock frequency of 104MHz, the memory rotates on its own. There is a need for a programming voltage of 2.7V in order to modify the state of some nonvolatile memory arrays.