AT25XV021A-MHV-T

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Manufacturer part number:AT25XV021A-MHV-T

Manufacturer:Adesto Technologies

Description:Memory IC 5mm mm

Case Package:SOT-23

Datasheet:AT25XV021A-MHV-T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mounting Type	Surface Mount
Package / Case	8-UDFN Exposed Pad
Surface Mount	YES
Operating Temperature	-40°C~85°C TC
Packaging	Cut Tape (CT)
Published	2015
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Technology	CMOS
Voltage - Supply	1.65V~4.4V
Terminal Position	DUAL
Number of Functions	1
Supply Voltage	1.8V
Terminal Pitch	1.27mm
JESD-30 Code	R-PDSO-N8
Supply Voltage-Max (Vsup)	4.4V
Supply Voltage-Min (Vsup)	1.65V
Interface	SPI, Serial
Memory Size	2Mb 256K x 8
Memory Type	Non-Volatile
Operating Mode	SYNCHRONOUS
Clock Frequency	70MHz
Memory Format	FLASH
Memory Interface	SPI
Organization	2MX1
Memory Width	1
Write Cycle Time - Word, Page	8μs, 2.5ms
Memory Density	2097152 bit
Programming Voltage	1.8V
Height Seated (Max)	0.6mm
Length	5mm
Width	6mm
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$1.590000	$1.59
10	$1.500000	$15
100	$1.415094	$141.5094
500	$1.334995	$667.4975
1000	$1.259429	$1259.429

AT25XV021A-MHV-T Overview

In this case, the memory type of the device can be classified as Non-Volatile. The case comes in the Cut Tape (CT) style. The file is embedded in a 8-UDFN Exposed Pad case. 2Mb 256K x 8 is the chip's memory size. There is a mainstream memory format used by this device, which is called FLASH-format memory. A wide operating temperature range makes this device ideal for a variety of demanding applications. The supply voltage can be up to 1.65V~4.4V. A Surface Mount mounting type is recommended for this product. On the chip, there are 8 terminations. In total, 1 functions are supported by this part. The memory device is designed to be supplied with an 1.8V volt power supply in order to operate properly. The memory has a clock frequency rotation within 70MHz. Nonvolatile memory arrays require 1.8V programming voltage to change their state.