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AOWF11N60

AOWF11N60

AOWF11N60

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 11A TO262F

SOT-23

AOWF11N60 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Full Pack, I2Pak
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 27.8W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 650m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1990pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 11A
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price

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