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BLC8G27LS-100AV

BLC8G27LS-100AV

BLC8G27LS-100AV

Ampleon

BLC8G27LS-100AV datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Ampleon stock available on our website

SOT-23

BLC8G27LS-100AV Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
ECCN (US) EAR99
Channel Mode Enhancement
Number of Elements per Chip 2
Process Technology LDMOS
Maximum Drain Source Voltage (V) 65
Maximum Gate Source Voltage (V) 13
Output Power (W) 17(Typ)
Typical Power Gain (dB) 15.5
Maximum Frequency (MHz) 2690
Minimum Frequency (MHz) 2490
Typical Drain Efficiency (%) 45
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 225
Supplier Package DFM
Military No
Mounting Surface Mount
Package Height 4.01(Max)
Package Length 20.7(Max)
Package Width 9.91(Max)
PCB changed 7
Part Status Active
Pin Count 7
Configuration Dual Common Source
Channel Type N
Mode of Operation 1-Carrier W-CDMA
RoHS Status RoHS Compliant

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