BLC9G20LS-361AVT

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Manufacturer part number:BLC9G20LS-361AVT

Manufacturer:Ampleon

Description:BLC9G20LS-361AVT datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Ampleon stock available on our website

Case Package:SOT-23

Datasheet:BLC9G20LS-361AVT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
ECCN (US)	EAR99
Channel Mode	Enhancement
Number of Elements per Chip	2
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	65
Maximum Gate Source Voltage (V)	13
Maximum Gate Threshold Voltage (V)	2.5
Maximum VSWR	10
Maximum Gate Source Leakage Current (nA)	280
Maximum IDSS (uA)	2.8
Maximum Drain Source Resistance (mOhm)	[email protected]
Typical Forward Transconductance (S)	1.27
Output Power (W)	360
Typical Power Gain (dB)	15.7
Maximum Frequency (MHz)	1990
Minimum Frequency (MHz)	1805
Typical Drain Efficiency (%)	47.5
Minimum Operating Temperature (°C)	-65
Maximum Operating Temperature (°C)	225
Military	No
Part Status	LTB
Configuration	Dual Common Source
Channel Type	N
Mode of Operation	1-Carrier W-CDMA