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BLF10H6600PS

BLF10H6600PS

BLF10H6600PS

Ampleon

BLF10H6600PS datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Ampleon stock available on our website

SOT-23

BLF10H6600PS Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
ECCN (US) EAR99
Channel Mode Enhancement
Number of Elements per Chip 1
Process Technology LDMOS
Maximum Drain Source Voltage (V) 110
Maximum Gate Source Voltage (V) 11
Maximum Gate Threshold Voltage (V) 2.4
Maximum VSWR 40
Maximum Gate Source Leakage Current (nA) 280
Maximum IDSS (uA) 2.8
Maximum Drain Source Resistance (mOhm) 143(Typ)@6.15V
Typical Input Capacitance @ Vds (pF) 220@50V
Typical Reverse Transfer Capacitance @ Vds (pF) 1.2@50V
Typical Output Capacitance @ Vds (pF) 74@50V
Output Power (W) 600(Typ)
Typical Power Gain (dB) 20.8|19.8
Maximum Frequency (MHz) 1000
Minimum Frequency (MHz) 400
Typical Drain Efficiency (%) 58
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 225
Supplier Package SOT-539B
Military No
Mounting Surface Mount
Package Height 4.7(Max)
Package Length 32.77(Max)
Package Width 10.29(Max)
PCB changed 5
Part Status Active
Pin Count 5
Configuration Dual Common Source
Channel Type N
Mode of Operation Pulsed RF Class-AB|2-Tone Class-AB
RoHS Status RoHS Compliant

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