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BLF369,112

BLF369,112

BLF369,112

Ampleon

BLF369,112 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Ampleon stock available on our website

SOT-23

BLF369,112 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
ECCN (US) EAR99
Channel Mode Enhancement
Number of Elements per Chip 2
Process Technology LDMOS
Maximum Drain Source Voltage (V) 65
Maximum Gate Source Voltage (V) 13
Maximum VSWR 10
Maximum Drain Source Resistance (mOhm) 40(Typ)@14.5V
Typical Input Capacitance @ Vds (pF) 400@32V
Typical Reverse Transfer Capacitance @ Vds (pF) 15@32V
Typical Output Capacitance @ Vds (pF) 230@32V
Typical Forward Transconductance (S) 15
Output Power (W) 500
Typical Power Gain (dB) 18|19|19|19|19|19|19
Maximum Frequency (MHz) 500
Minimum Frequency (MHz) 10
Typical Drain Efficiency (%) 60
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 200
Supplier Package LDMOST
Military No
Mounting Screw
Package Height 6.3
Package Length 44.5
Package Width 15.4
PCB changed 5
Part Status Obsolete
Pin Count 5
Configuration Dual Common Source
Channel Type N
Mode of Operation CW Class-AB|Pulsed RF Class-AB|2-Tone Class-AB
RoHS Status Yes with exemptions

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