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BLL8H0514LS-130

BLL8H0514LS-130

BLL8H0514LS-130

Ampleon

BLL8H0514LS-130 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Ampleon stock available on our website

SOT-23

BLL8H0514LS-130 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
ECCN (US) EAR99
HTS 8541.29.00.95
Channel Mode Enhancement
Number of Elements per Chip 1
Process Technology LDMOS
Maximum Drain Source Voltage (V) 100
Maximum Gate Source Voltage (V) 13
Maximum Gate Threshold Voltage (V) 2.25
Maximum VSWR 5
Maximum Gate Source Leakage Current (nA) 140
Maximum IDSS (uA) 1.4
Maximum Drain Source Resistance (mOhm) [email protected]
Typical Forward Transconductance (S) 1.578(Max)
Output Power (W) 130(Typ)
Typical Power Gain (dB) 17
Maximum Frequency (MHz) 1400
Minimum Frequency (MHz) 500
Typical Fall Time (ns) 6
Typical Rise Time (ns) 20
Typical Drain Efficiency (%) 50
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 225
Military No
RoHS Non-Compliant
Manufacturer Ampleon
Packaging Bulk
Part Status Active
Reach Compliance Code unknown
Configuration Single
Channel Type N
Mode of Operation Pulsed RF
RoHS Status RoHS Compliant

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