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BLP10H690P

BLP10H690P

BLP10H690P

Ampleon

BLP10H690P datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Ampleon stock available on our website

SOT-23

BLP10H690P Datasheet

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Specifications
Name Value
Type Parameter
ECCN (US) EAR99
HTS 8541.29.00.75
Channel Mode Enhancement
Number of Elements per Chip 2
Process Technology LDMOS
Maximum Drain Source Voltage (V) 110
Maximum Gate Source Voltage (V) 11
Maximum VSWR 40
Maximum Drain Source Resistance (mOhm) 770(Typ)@6V
Typical Input Capacitance @ Vds (pF) 42.1@50V
Typical Reverse Transfer Capacitance @ Vds (pF) 0.22@50V
Typical Output Capacitance @ Vds (pF) 12.9@50V
Output Power (W) 90
Typical Power Gain (dB) 18
Maximum Frequency (MHz) 1000
Minimum Frequency (MHz) 10
Typical Drain Efficiency (%) 72
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 225
Supplier Package HSOP-F
Military No
Mounting Surface Mount
Package Height 3.6
Package Length 20.57
Package Width 9.96
PCB changed 4
Part Status Active
Type MOSFET
Pin Count 4
Configuration Dual Common Source
Channel Type N
Mode of Operation Pulsed RF

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