BLP9G0722-20G

new-10%

Manufacturer part number:BLP9G0722-20G

Manufacturer:Ampleon

Description:BLP9G0722-20G datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Ampleon stock available on our website

Case Package:SOT-23

Datasheet:BLP9G0722-20G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
ECCN (US)	EAR99
Channel Mode	Enhancement
Number of Elements per Chip	1
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	65
Maximum Gate Source Voltage (V)	13
Maximum Gate Threshold Voltage (V)	2(Typ)
Maximum VSWR	10
Maximum Gate Source Leakage Current (nA)	140
Maximum IDSS (uA)	1.4
Maximum Drain Source Resistance (mOhm)	500(Typ)@5.75V
Typical Forward Transconductance (S)	0.3
Output Power (W)	20
Typical Power Gain (dB)	19
Maximum Frequency (MHz)	2700
Minimum Frequency (MHz)	100
Typical Drain Efficiency (%)	22
Minimum Operating Temperature (°C)	-65
Maximum Operating Temperature (°C)	225
Supplier Package	TO-270
Military	No
Mounting	Surface Mount
Package Height	2.03
Package Length	9.65
Package Width	6.1
PCB changed	3
Part Status	Active
Type	MOSFET
Pin Count	3
Configuration	Single
Channel Type	N
Mode of Operation	1-Carrier W-CDMA