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BLF6G10LS-200RN:11

BLF6G10LS-200RN:11

BLF6G10LS-200RN:11

Ampleon USA Inc.

RF FET LDMOS 65V 20DB SOT502B

SOT-23

BLF6G10LS-200RN:11 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Package / Case SOT-502B
Surface Mount YES
Transistor Element Material SILICON
Packaging Tray
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Voltage - Rated 65V
Current Rating (Amps) 49A
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 871.5MHz~891.5MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BLF6G10
Reference Standard IEC-60134
JESD-30 Code R-CDFP-F2
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 1.4A
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 20dB
Drain Current-Max (Abs) (ID) 49A
DS Breakdown Voltage-Min 65V
Power - Output 40W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $448.534560 $448.53456
10 $423.145811 $4231.45811
100 $399.194162 $39919.4162
500 $376.598266 $188299.133
1000 $355.281383 $355281.383

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