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BLF8G24L-200P,112

BLF8G24L-200P,112

BLF8G24L-200P,112

Ampleon USA Inc.

RF FET LDMOS 65V 17.2DB SOT539A

SOT-23

BLF8G24L-200P,112 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Package / Case SOT539A
Surface Mount YES
Transistor Element Material SILICON
Packaging Tube
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Voltage - Rated 65V
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Frequency 2.3GHz~2.4GHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BLF8G24
Reference Standard IEC-60134
JESD-30 Code R-CDFM-F4
Number of Elements 2
Configuration COMMON SOURCE, 2 ELEMENTS
Operating Mode ENHANCEMENT MODE
Current - Test 1.74A
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS (Dual), Common Source
Gain 17.2dB
DS Breakdown Voltage-Min 65V
Power - Output 60W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS Status Non-RoHS Compliant

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