BD239-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BD239-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
Subcategory
Other Transistors
Max Power Dissipation
30W
Base Part Number
BD239
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
30W
Case Connection
COLLECTOR
Power - Max
2W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 1A 4V
Current - Collector Cutoff (Max)
300μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
700mV @ 200mA, 1A
Collector Emitter Breakdown Voltage
45V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
2A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
BD239-S Product Details
BD239-S Overview
In this device, the DC current gain is 15 @ 1A 4V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 200mA, 1A.Continuous collector voltages should be kept at 2A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.When collector current reaches its maximum, it can reach 2A volts.
BD239-S Features
the DC current gain for this device is 15 @ 1A 4V the vce saturation(Max) is 700mV @ 200mA, 1A the emitter base voltage is kept at 5V
BD239-S Applications
There are a lot of Bourns Inc. BD239-S applications of single BJT transistors.