BD241B-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BD241B-S Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
Subcategory
Other Transistors
Max Power Dissipation
40W
Base Part Number
BD241
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
40W
Case Connection
COLLECTOR
Power - Max
2W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1A 4V
Current - Collector Cutoff (Max)
300μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1.2V @ 600mA, 3A
Collector Emitter Breakdown Voltage
80V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
BD241B-S Product Details
BD241B-S Overview
This device has a DC current gain of 25 @ 1A 4V, which is the ratio between the collector current and the base current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 600mA, 3A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Collector current can be as low as 3A volts at its maximum.
BD241B-S Features
the DC current gain for this device is 25 @ 1A 4V the vce saturation(Max) is 1.2V @ 600mA, 3A the emitter base voltage is kept at 5V
BD241B-S Applications
There are a lot of Bourns Inc. BD241B-S applications of single BJT transistors.