BD242A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BD242A-S Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
40W
Base Part Number
BD242
Number of Elements
1
Element Configuration
Single
Power Dissipation
40W
Power - Max
2W
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1A 4V
Current - Collector Cutoff (Max)
300μA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 600mA, 3A
Collector Emitter Breakdown Voltage
60V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
3A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
BD242A-S Product Details
BD242A-S Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 1A 4V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 3A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.During maximum operation, collector current can be as low as 3A volts.
BD242A-S Features
the DC current gain for this device is 25 @ 1A 4V the vce saturation(Max) is 1.2V @ 600mA, 3A the emitter base voltage is kept at 5V
BD242A-S Applications
There are a lot of Bourns Inc. BD242A-S applications of single BJT transistors.