BD543C-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BD543C-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
Subcategory
Other Transistors
Max Power Dissipation
70W
Base Part Number
BD543
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
70W
Case Connection
COLLECTOR
Power - Max
2W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 5A 4V
Current - Collector Cutoff (Max)
700μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1V @ 1.6A, 8A
Collector Emitter Breakdown Voltage
100V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
BD543C-S Product Details
BD543C-S Overview
This device has a DC current gain of 15 @ 5A 4V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Maximum collector currents can be below 8A volts.
BD543C-S Features
the DC current gain for this device is 15 @ 5A 4V the vce saturation(Max) is 1V @ 1.6A, 8A the emitter base voltage is kept at 5V
BD543C-S Applications
There are a lot of Bourns Inc. BD543C-S applications of single BJT transistors.