BD546-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BD546-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-218-3
Number of Pins
3
Supplier Device Package
SOT-93
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
3.5W
Base Part Number
BD546
Polarity
PNP
Element Configuration
Single
Power - Max
3.5W
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
1V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 10A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
1V @ 2A, 10A
Collector Emitter Breakdown Voltage
40V
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
15A
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
5V
RoHS Status
ROHS3 Compliant
BD546-S Product Details
BD546-S Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10 @ 10A 4V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 2A, 10A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.SOT-93 is the supplier device package for this product.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.The maximum collector current is 15A volts.
BD546-S Features
the DC current gain for this device is 10 @ 10A 4V the vce saturation(Max) is 1V @ 2A, 10A the emitter base voltage is kept at 5V the supplier device package of SOT-93
BD546-S Applications
There are a lot of Bourns Inc. BD546-S applications of single BJT transistors.