BD743B-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BD743B-S Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Max Power Dissipation
90W
Base Part Number
BD743
Pin Count
3
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
2W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 5A 4V
Current - Collector Cutoff (Max)
1μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
3V @ 5A, 15A
Collector Emitter Breakdown Voltage
80V
Collector Base Voltage (VCBO)
90V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
BD743B-S Product Details
BD743B-S Overview
DC current gain in this device equals 20 @ 5A 4V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 5A, 15A.The emitter base voltage can be kept at 5V for high efficiency.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.
BD743B-S Features
the DC current gain for this device is 20 @ 5A 4V the vce saturation(Max) is 3V @ 5A, 15A the emitter base voltage is kept at 5V
BD743B-S Applications
There are a lot of Bourns Inc. BD743B-S applications of single BJT transistors.