BD895A-S Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 4A 3V DC current gain.A collector emitter saturation voltage of 2.5V ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.8V @ 16mA, 4A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Single BJT transistor is possible for the collector current to fall as low as 8A volts at Single BJT transistors maximum.
BD895A-S Features
the DC current gain for this device is 750 @ 4A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.8V @ 16mA, 4A
the emitter base voltage is kept at 5V
BD895A-S Applications
There are a lot of Bourns Inc. BD895A-S applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
