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BDT61B-S

  • BDT61B-S
  • BDT61B-S

BDT61B-S

BDT61B-S

Bourns Inc.

BDT61B-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

BDT61B-S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 1993
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Power Dissipation 2W
Base Part Number BDT61
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Polarity NPN
Element Configuration Single
Case Connection COLLECTOR
Power - Max 2W
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A 3V
Current - Collector Cutoff (Max) 500μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 2.5V @ 6mA, 1.5A
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2.5V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 750
Radiation Hardening No
RoHS Status ROHS3 Compliant
BDT61B-S Product Details

BDT61B-S Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 1.5A 3V.With a collector emitter saturation voltage of 2.5V, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 5V for high efficiency.During maximum operation, collector current can be as low as 4A volts.

BDT61B-S Features


the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 1.5A
the emitter base voltage is kept at 5V

BDT61B-S Applications


There are a lot of Bourns Inc. BDT61B-S applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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