BDW24B-S Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 2A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 60mA, 6A.An emitter's base voltage can be kept at 5V to gain high efficiency.Single BJT transistor comes in a supplier device package of TO-220.Single BJT transistor shows a 80V maximal voltage - Collector EmSingle BJT transistorter Breakdown.A maximum collector current of 6A volts is possible.

BDW24B-S Features

the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 60mA, 6A
the emitter base voltage is kept at 5V
the supplier device package of TO-220

BDW24B-S Applications

There are a lot of Bourns Inc. BDW24B-S applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting