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BDW83D-S

BDW83D-S

BDW83D-S

Bourns Inc.

BDW83D-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

BDW83D-S Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-218-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2011
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Power Dissipation 3.5W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BDW83
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Case Connection COLLECTOR
Power - Max 3.5W
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 6A 3V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 4V @ 150mA, 15A
Collector Emitter Breakdown Voltage 120V
Collector Emitter Saturation Voltage 2.5V
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
RoHS Status ROHS3 Compliant
BDW83D-S Product Details

BDW83D-S Overview


In this device, the DC current gain is 750 @ 6A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2.5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.With the emitter base voltage set at 5V, an efficient operation can be achieved.When collector current reaches its maximum, it can reach 15A volts.

BDW83D-S Features


the DC current gain for this device is 750 @ 6A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 150mA, 15A
the emitter base voltage is kept at 5V

BDW83D-S Applications


There are a lot of Bourns Inc. BDW83D-S applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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