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BU407-S

BU407-S

BU407-S

Bourns Inc.

BU407-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

BU407-S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 1993
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation60W
Base Part Number BU407
Configuration Single
Power - Max 60W
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 7A
DC Current Gain (hFE) (Min) @ Ic, Vce 12 @ 4A 10V
Current - Collector Cutoff (Max) 5mA
Vce Saturation (Max) @ Ib, Ic 1V @ 500mA, 5A
Collector Emitter Breakdown Voltage140V
Frequency - Transition 6MHz
Collector Base Voltage (VCBO) 330V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:2496 items

BU407-S Product Details

BU407-S Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 12 @ 4A 10V DC current gain.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 500mA, 5A.Maximum collector currents can be below 7A volts.

BU407-S Features


the DC current gain for this device is 12 @ 4A 10V
the vce saturation(Max) is 1V @ 500mA, 5A

BU407-S Applications


There are a lot of Bourns Inc. BU407-S applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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