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BUT11-S

BUT11-S

BUT11-S

Bourns Inc.

BUT11-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

BUT11-S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature-65°C~150°C TJ
PackagingBulk
Published 1993
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation100W
Frequency 12MHz
Base Part Number BUT11
Number of Elements 1
Configuration Single
Power Dissipation100W
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 500mA 5V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 600mA, 3A
Collector Emitter Breakdown Voltage400V
Current - Collector (Ic) (Max) 5A
Collector Base Voltage (VCBO) 850V
Emitter Base Voltage (VEBO) 10V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:2825 items

BUT11-S Product Details

BUT11-S Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 500mA 5V DC current gain.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 600mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.The maximum collector current is 5A volts.

BUT11-S Features


the DC current gain for this device is 20 @ 500mA 5V
the vce saturation(Max) is 1.5V @ 600mA, 3A
the emitter base voltage is kept at 10V

BUT11-S Applications


There are a lot of Bourns Inc. BUT11-S applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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