BUT11-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BUT11-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
100W
Frequency
12MHz
Base Part Number
BUT11
Number of Elements
1
Configuration
Single
Power Dissipation
100W
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 500mA 5V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 600mA, 3A
Collector Emitter Breakdown Voltage
400V
Current - Collector (Ic) (Max)
5A
Collector Base Voltage (VCBO)
850V
Emitter Base Voltage (VEBO)
10V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
BUT11-S Product Details
BUT11-S Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 500mA 5V DC current gain.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 600mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.The maximum collector current is 5A volts.
BUT11-S Features
the DC current gain for this device is 20 @ 500mA 5V the vce saturation(Max) is 1.5V @ 600mA, 3A the emitter base voltage is kept at 10V
BUT11-S Applications
There are a lot of Bourns Inc. BUT11-S applications of single BJT transistors.