TIP29F-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
TIP29F-S Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
2W
Base Part Number
TIP29
Polarity
NPN
Power - Max
2W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
700mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 200mA 4V
Current - Collector Cutoff (Max)
300μA
Vce Saturation (Max) @ Ib, Ic
700mV @ 125mA, 1A
Collector Emitter Breakdown Voltage
160V
Voltage - Collector Emitter Breakdown (Max)
160V
Current - Collector (Ic) (Max)
1A
Collector Base Voltage (VCBO)
200V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
TIP29F-S Product Details
TIP29F-S Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 200mA 4V DC current gain.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).This product comes in a TO-220 device package from the supplier.Device displays Collector Emitter Breakdown (160V maximal voltage).When collector current reaches its maximum, it can reach 1A volts.
TIP29F-S Features
the DC current gain for this device is 40 @ 200mA 4V the vce saturation(Max) is 700mV @ 125mA, 1A the supplier device package of TO-220
TIP29F-S Applications
There are a lot of Bourns Inc. TIP29F-S applications of single BJT transistors.