TIP30-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
TIP30-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
2W
Base Part Number
TIP30
Number of Elements
1
Configuration
Single
Power Dissipation
30W
Power - Max
2W
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 1A 4V
Current - Collector Cutoff (Max)
300μA
Vce Saturation (Max) @ Ib, Ic
700mV @ 125mA, 1A
Collector Emitter Breakdown Voltage
40V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
TIP30-S Product Details
TIP30-S Overview
In this device, the DC current gain is 15 @ 1A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 125mA, 1A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.In extreme cases, the collector current can be as low as 1A volts.
TIP30-S Features
the DC current gain for this device is 15 @ 1A 4V the vce saturation(Max) is 700mV @ 125mA, 1A the emitter base voltage is kept at 5V
TIP30-S Applications
There are a lot of Bourns Inc. TIP30-S applications of single BJT transistors.