TIP31E-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
TIP31E-S Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
2W
Base Part Number
TIP31
Number of Elements
1
Polarity
NPN
Power Dissipation
40W
Power - Max
2W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
140V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1A 4V
Current - Collector Cutoff (Max)
300μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 750MA, 3A
Collector Emitter Breakdown Voltage
140V
Voltage - Collector Emitter Breakdown (Max)
140V
Current - Collector (Ic) (Max)
3A
Collector Base Voltage (VCBO)
180V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
TIP31E-S Product Details
TIP31E-S Overview
In this device, the DC current gain is 25 @ 1A 4V, which is the ratio between the base current and the collector current.When VCE saturation is 2.5V @ 750MA, 3A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.The product comes in the supplier device package of TO-220.Detection of Collector Emitter Breakdown at 140V maximal voltage is present.Maximum collector currents can be below 3A volts.
TIP31E-S Features
the DC current gain for this device is 25 @ 1A 4V the vce saturation(Max) is 2.5V @ 750MA, 3A the emitter base voltage is kept at 5V the supplier device package of TO-220
TIP31E-S Applications
There are a lot of Bourns Inc. TIP31E-S applications of single BJT transistors.