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TIP31E-S

TIP31E-S

TIP31E-S

Bourns Inc.

TIP31E-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

TIP31E-S Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220
Packaging Tube
Published 1993
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 2W
Base Part Number TIP31
Number of Elements 1
Polarity NPN
Power Dissipation 40W
Power - Max 2W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 140V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A 4V
Current - Collector Cutoff (Max) 300μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 750MA, 3A
Collector Emitter Breakdown Voltage 140V
Voltage - Collector Emitter Breakdown (Max) 140V
Current - Collector (Ic) (Max) 3A
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
TIP31E-S Product Details

TIP31E-S Overview


In this device, the DC current gain is 25 @ 1A 4V, which is the ratio between the base current and the collector current.When VCE saturation is 2.5V @ 750MA, 3A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.The product comes in the supplier device package of TO-220.Detection of Collector Emitter Breakdown at 140V maximal voltage is present.Maximum collector currents can be below 3A volts.

TIP31E-S Features


the DC current gain for this device is 25 @ 1A 4V
the vce saturation(Max) is 2.5V @ 750MA, 3A
the emitter base voltage is kept at 5V
the supplier device package of TO-220

TIP31E-S Applications


There are a lot of Bourns Inc. TIP31E-S applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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