TIP36A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
TIP36A-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-218-3
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Subcategory
Other Transistors
Max Power Dissipation
3.5W
Reach Compliance Code
unknown
Base Part Number
TIP36
Number of Elements
1
Configuration
Single
Power Dissipation
125W
Power - Max
3.5W
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
4V
Max Collector Current
25A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 15A 4V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
4V @ 5A, 25A
Collector Emitter Breakdown Voltage
60V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
RoHS Status
ROHS3 Compliant
TIP36A-S Product Details
TIP36A-S Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10 @ 15A 4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 4V @ 5A, 25A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.A maximum collector current of 25A volts can be achieved.
TIP36A-S Features
the DC current gain for this device is 10 @ 15A 4V the vce saturation(Max) is 4V @ 5A, 25A the emitter base voltage is kept at 5V
TIP36A-S Applications
There are a lot of Bourns Inc. TIP36A-S applications of single BJT transistors.