TIPL761A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
TIPL761A-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-218-3
Number of Pins
3
Supplier Device Package
SOT-93
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
100W
Base Part Number
TIPL761
Polarity
NPN
Power - Max
100W
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
2.5V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 500mA 5V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 800mA, 4A
Collector Emitter Breakdown Voltage
450V
Voltage - Collector Emitter Breakdown (Max)
450V
Current - Collector (Ic) (Max)
4A
RoHS Status
ROHS3 Compliant
TIPL761A-S Product Details
TIPL761A-S Overview
DC current gain in this device equals 60 @ 500mA 5V, which is the ratio of the base current to the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Product comes in the supplier's device package SOT-93.Single BJT transistor shows a 450V maximal voltage - Collector EmSingle BJT transistorter Breakdown.During maximum operation, collector current can be as low as 4A volts.
TIPL761A-S Features
the DC current gain for this device is 60 @ 500mA 5V the vce saturation(Max) is 2.5V @ 800mA, 4A the supplier device package of SOT-93
TIPL761A-S Applications
There are a lot of Bourns Inc. TIPL761A-S applications of single BJT transistors.